Author

Kazushi Komatsu

Toshiba Memory Corporation - Cited by 1,681

Biography

He is currently working as a Professor in the Department of Mathematics. His research interests includes Sciences. He is serving as an editorial member and reviewer of several international reputed journals. He has successfully completed his Administrative responsibilities. He  has authored of many research articles/books related to Sciences.
Title
Cited by
Year
Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors
SL Li, K Wakabayashi, Y Xu, S Nakaharai, K Komatsu, WW Li, YF Lin, ...Nano letters 13 (8), 3546-3552, 2013201
338
2013
Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
SL Li, K Komatsu, S Nakaharai, YF Lin, M Yamamoto, X Duan, ...ACS nano 8 (12), 12836-12842, 2014201
165
2014
Strain superlattices and macroscale suspension of graphene induced by corrugated substrates
A Reserbat-Plantey, D Kalita, Z Han, L Ferlazzo, S Autier-Laurent, ...Nano letters 14 (9), 5044-5051, 2014201
158
2014
Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu (111) thin film
H Ago, K Kawahara, Y Ogawa, S Tanoue, MA Bissett, M Tsuji, ...Applied Physics Express 6 (7), 075101, 2013201
110
2013
Suppression of thermally activated carrier transport in atomically thin MoS 2 on crystalline hexagonal boron nitride substrates
MY Chan, K Komatsu, SL Li, Y Xu, P Darmawan, H Kuramochi, ...Nanoscale 5 (20), 9572-9576, 2013201
78
2013
Observation of the quantum valley Hall state in ballistic graphene superlattices
K Komatsu, Y Morita, E Watanabe, D Tsuya, K Watanabe, T Taniguchi, ...Science advances 4 (5), eaaq0194, 2018201
69
2018
Barrier inhomogeneities at vertically stacked graphene-based heterostructures
YF Lin, W Li, SL Li, Y Xu, A Aparecido-Ferreira, K Komatsu, H Sun, ...Nanoscale 6 (2), 795-799, 2014201
68
2014
High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
Y Sasama, K Komatsu, S Moriyama, M Imura, T Teraji, K Watanabe, ...Apl Materials 6 (11), 2018201
66
2018
Structure and transport properties of the interface between CVD-grown graphene domains
Y Ogawa, K Komatsu, K Kawahara, M Tsuji, K Tsukagoshi, H AgoNanoscale 6 (13), 7288-7294, 2014201
61
2014
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Y Sasama, T Kageura, K Komatsu, S Moriyama, J Inoue, M Imura, ...Journal of Applied Physics 127 (18), 2020202
33
2020
Topological valley currents in bilayer graphene/hexagonal boron nitride superlattices
K Endo, K Komatsu, T Iwasaki, E Watanabe, D Tsuya, K Watanabe, ...Applied Physics Letters 114 (24), 2019201
30
2019
Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices
S Moriyama, Y Morita, K Komatsu, K Endo, T Iwasaki, S Nakaharai, ...arXiv preprint arXiv:1901.09356, 2019201
21
2019
Quantum oscillations in diamond field-effect transistors with a -BN gate dielectric
Y Sasama, K Komatsu, S Moriyama, M Imura, S Sugiura, T Terashima, ...Physical Review Materials 3 (12), 121601, 191
20
2019
Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins
C Li, K Komatsu, S Bertrand, G Clavé, S Campidelli, A Filoramo, S Guéron, ...Physical Review B 93 (4), 045403, 2016201
15
2016
Thermal and quantum phase slips in niobium-nitride nanowires based on suspended carbon nanotubes
K Masuda, S Moriyama, Y Morita, K Komatsu, T Takagi, T Hashimoto, ...Applied Physics Letters 108 (22), 2016201
14
2016
Fabry–Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
NF Ahmad, K Komatsu, T Iwasaki, K Watanabe, T Taniguchi, H Mizuta, ...Scientific Reports 9 (1), 3031, 2019201
12
2019
Effect of interfacial water formed between graphene and SiO2/Si substrate
T Koyama, T Inaba, K Komatsu, S Moriyama, M Shimizu, Y HommaApplied Physics Express 10 (7), 075102, 2017201
12
2017
Self-assembling diacetylene molecules on atomically flat insulators
E Verveniotis, Y Okawa, MV Makarova, Y Koide, J Liu, B Šmíd, ...Physical Chemistry Chemical Physics 18 (46), 31600-31605, 2016201
12
2016
Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric
W Li, SL Li, K Komatsu, A Aparecido-Ferreira, YF Lin, Y Xu, M Osada, ...Applied Physics Letters 103 (2), 2013201
11
2013