Author

Preston T

Air Force Research Laboratory - Cited by 501

Biography

Preston T currently working in the Department of Hepatology and Gastroenterology. His research interests includes Hepatic and Gastric complications. He has authored of many research articles/books related to Radiology. He has successfully completed his Administrative responsibilities.
Title
Cited by
Year
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...Journal of Applied Physics 118 (24), 2015201
89
2015
Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices
PT Webster, AJ Shalindar, NA Riordan, C Gogineni, H Liang, AR Sharma, ...Journal of Applied Physics 119 (22), 2016201
45
2016
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...Applied Physics Letters 106 (6), 2015201
43
2015
Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
LK Casias, CP Morath, EH Steenbergen, GA Umana-Membreno, ...Applied Physics Letters 116 (18), 2020202
31
2020
Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction
AJ Shalindar, PT Webster, BJ Wilkens, TL Alford, SR JohnsonJournal of applied Physics 120 (14), 2016201
27
2016
Investigation of MBE-grown InAs1− xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy
J Lu, PT Webster, S Liu, YH Zhang, SR Johnson, DJ SmithJournal of Crystal Growth 425, 250-254, 2015201
24
2015
Absorption edge characteristics of GaAs, GaSb, InAs, and InSb
ST Schaefer, S Gao, PT Webster, RR Kosireddy, SR JohnsonJournal of Applied Physics 127 (16), 2020202
19
2020
Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy
PT Webster, AJ Shalindar, ST Schaefer, SR JohnsonApplied Physics Letters 111 (8), 202
17
2017
Molecular beam epitaxy growth and optical properties of InAsSbBi
ST Schaefer, RR Kosireddy, PT Webster, SR JohnsonJournal of Applied Physics 126 (8), 2019201
13
2019
Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ...Journal of Applied Physics 9 (18), 2021202
12
2021
Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications
LK Casias, CP Morath, EH Steenbergen, PT Webster, JK Kim, VM Cowan, ...Infrared Physics & Technology 6, 184-11, 20120
9
2019
1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications
CM Campbell, Y Zhao, E Suarez, M Boccard, XH Zhao, ZY He, ...201 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 0411-0414, 20120
6
2016
Proton irradiation effects on InGaAs/InAsSb mid-wave barrier infrared detectors
RA Carrasco, J George, D Maestas, ZM Alsaad, D Garnham, CP Morath, ...Journal of Applied Physics 130 (11), 2021202
6
2021
InAsBi Materials
AJ Shalindar, PT Webster, ST Schaefer, SR JohnsonMolecular Beam Epitaxy, 181-19, 2018201
6
2018
Orbital equivalence of terrestrial radiation tolerance experiments
JV Logan, MP Short, PT Webster, CP MorathIEEE Transactions on Nuclear Science 67 (11), 2382-2391, 2020202
5
2020
Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi
P Petluru, PC Grant, AJ Muhowski, IM Obermeier, MS Milosavljevic, ...Applied Physics Letters 117 (6), 2020202
5
2020
Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces
MD Goldflam, I Ruiz, SW Howell, A Tauke-Pedretti, EM Anderson, ...Applied Physics Letters 116 (19), 2020202
5
2020
Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant
PT Webster, ST Schaefer, EH Steenbergen, SR JohnsonQuantum Sensing and Nano Electronics and Photonics XV 1040, 173-179, 2018201
5
2018
Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
RA Carrasco, CP Morath, JV Logan, KB Woller, PC Grant, H Orozco, ...Applied Physics Letters 120 (3), 2022202
4
2022
Examination of the structural quality of InAsSbBi epilayers using cross section transmission electron microscopy
RR Kosireddy, ST Schaefer, AJ Shalindar, PT Webster, SR JohnsonMicroscopy and Microanalysis 2 (S1), 36-37, 2018201
4
2018

Referred From: https://scholar.google.com/citations?hl=en&user=hMgOEI8AAAAJ

Cited by
Citations 501
h-index 12
i10-index 13
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