Author

Stacia Yearwood

University of California Santa Barbara - Cited by 42,092 - group-III nitride crystal growth - characterization - and device applications

Biography

Stacia Yearwood, Caribbean Risk Managers (Barbados) Ltd, Haggatt Hall, Barbados. He  has published more than 30 articles, In the field of Environment, Geospatial Science, Natural Disasters,Earth Sciences, Geographic Information System. He  has published more than 30 articles, In the field of Environment, Geospatial Science, Natural Disasters,Earth Sciences, Geographic Information System. 
Title
Cited by
Year
Demonstration of ultra-small (< 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (> 0.2%) for mini-displays
SS Pasayat, C Gupta, MS Wong, R Ley, MJ Gordon, SP DenBaars, ...Applied Physics Express 14 (1), 011004, 2020202
79
2020
6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates
W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ...IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021202
35
2021
InGaN-based microLED devices approaching 1% EQE with red 609 nm electroluminescence on semi-relaxed substrates
RC White, H Li, M Khoury, C Lynsky, M Iza, S Keller, D Sotta, S Nakamura, ...Crystals 11 (11), 1364, 2021202
23
2021
MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates
RC White, M Khoury, F Wu, S Keller, M Rozhavskaia, D Sotta, ...Semiconductor Science and Technology 36 (1), 015011, 2020202
13
2020
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
B Romanczyk, M Guidry, X Zheng, P Shrestha, H Li, E Ahmadi, S Keller, ...Applied Physics Letters 119 (7), 2021202
12
2021
First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)
R Vetury, H Marchand, G Parish, PT Fini, JP Ibbetson, S Keller, JS Speck, ...Compound Semiconductors 1998, 177-183, 2021202
11
2021
GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and> 50 mA/mm on-current
A Raj, A Krishna, N Hatui, B Romanczyk, C Wurm, M Guidry, R Hamwey, ...2021 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2021202
9
2021
HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures
CJ Clymore, S Mohanty, ZA Jian, A Krishna, S Keller, E AhmadiSemiconductor Science and Technology 36 (3), 03501, 2021202
7
2021
Commercially available N-polar GaN HEMT epitaxy for RF applications
D Bisi, B Romanczyk, X Liu, G Gupta, T Brown-Heft, R Birkhahn, R Lal, ...2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021202
7
2021
Structure for increasing mobility in a high electron mobility transistor
B Romanczyk, H Li, E Ahmadi, S Wienecke, M Guidry, X Zheng, S Keller, ...US Patent 11,101,379, 2021202
6
2021
Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE
Demonstration of device-quality 0% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBEC Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ...Journal of Applied Physics 131 (1), 2022202
6
2022
Realization of iii-nitride c-plane microleds emitting from 470 to 645 nm on semi-relaxed substrates enabled by v-defect-free base layers
Realization of iii-nitride c-plane microleds emitting from 470 to 45 nm on semi-relaxed substrates enabled by v-defect-free base layersRC White, M Khoury, MS Wong, H Li, C Lynsky, M Iza, S Keller, D Sotta, ...Crystals 11 (10), 118, 2021202
6
2021
Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐to the Micrometer Scale
S Keller, SS Pasayat, C Gupta, SP DenBaars, S Nakamura, UK Mishraphysica status solidi (RRL)–Rapid Research Letters 15 (11), 2100234, 2021202
6
2021
Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices
A Krishna, A Raj, N Hatui, S Keller, S Denbaars, UK MishraApplied Physics Letters 120 (13), 2022202
5
2022
Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
CE Reilly, S Keller, S Nakamura, SP DenBaarsLight: Science & Applications 10 (1), 10, 2021202
5
2021
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
CE Reilly, N Hatui, TE Mates, S Nakamura, SP DenBaars, S KellerApplied Physics Letters 118 (22), 2021202
4
2021
Metal organic vapor phase epitaxy of thick N-polar InGaN films
N Hatui, A Krishna, SS Pasayat, S Keller, UK MishraElectronics 10 (10), 1182, 2021202
4
2021
High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications
OS Koksaldi, B Romanczyk, J Haller, M Guidry, H Li, S Keller, UK MishraSemiconductor Science and Technology 35 (12), 1200, 2020202
4
2020
Structural and optical properties of low-dislocationdensity GaN laterally overgrown by metalorganic chemical vapor deposition
H Marchand, JP Ibbetson, PT Fini, S Chichibu, SJ Rosner, S Keller, ...Compound Semiconductors 1998, 681-686, 2021202
4
2021
Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride
J Wang, H Li, H Li, S Keller, UK Mishra, BD Nener, G Parish, R AtkinJournal of Colloid and Interface Science 60, 604-614, 2021202
3
2021

Referred From: https://scholar.google.com/citations?hl=en&user=jyMkdGAAAAAJ

Cited by
Citations 42092
h-index 103
i10-index 475
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