Author

Yu Ran

Unknown affiliation - Cited by 3,069

Biography

Dr.  Yu Ran is currently working in Department of Gynecology, The First Affiliated Hospital of Chongqing Medical University, Chongqing, China. He has published numerous research papers and articles in reputed journals and has various other achievements in the related studies. He has extended his valuable service towards the scientific community with his extensive research work. 
Title
Cited by
Year
Junctionless nanowire transistor (JNT): Properties and design guidelines
JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ...Solid-State Electronics 65, 33-37, 2011201
647
2011
Junctionless multiple-gate transistors for analog applications
RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ...IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011201
271
2011
Improvement of carrier ballisticity in junctionless nanowire transistors
N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP ColingeApplied Physics Letters 98 (10), 2011201
52
2011
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P RazaviApplied Physics Letters 101 (21), 2012201
52
2012
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current
M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014201
52
2014
Junctionless nanowire transistor: complementary metal-oxide-semiconductor without junctions
JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, P Razavi, R Yan, ...Science of Advanced Materials 3 (3), 477-482, 2011201
50
2011
Bipolar effects in unipolar junctionless transistors
MS Parihar, D Ghosh, GA Armstrong, R Yu, P Razavi, A KrantiApplied Physics Letters 101 (9), 2012201
46
2012
A simulation comparison between junctionless and inversion-mode MuGFETs
JP Colinge, A Kranti, R Yan, I Ferain, ND Akhavan, P Razavi, CW Lee, ...ECS Transactions 35 (5), 63, 2011201
41
2011
Investigation of high-performance sub-50 nm junctionless nanowire transistors
R Yan, A Kranti, I Ferain, CW Lee, R Yu, N Dehdashti, P Razavi, ...Microelectronics Reliability 51 (7), 1166-1171, 2011201
40
2011
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G FagasMicroelectronic Engineering 109, 326-329, 2013201
40
2013
Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates
R Yu, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, ...IEEE transactions on electron devices 59 (9), 2308-2313, 2012201
37
2012
The curious case of thin-body Ge crystallization
R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ...Applied Physics Letters 99 (13), 2011201
34
2011
Impact ionization induced dynamic floating body effect in junctionless transistors
R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, ...Solid-state electronics 90, 28-, 2013201
33
2013
Atomically flat low-resistive germanide contacts formed by laser thermal anneal
M Shayesteh, K Huet, I Toqué-Tresonne, R Negru, CLM Daunt, N Kelly, ...IEEE transactions on electron devices 60 (7), 2178-2185, 2013201
30
2013
Method for extracting doping concentration and flat-band voltage in junctionless multigate MOSFETs using 2-D electrostatic effects
T Rudenko, R Yu, S Barraud, K Cherkaoui, A NazarovIEEE Electron Device Letters 34 (8), 957-959, 2013201
28
2013
Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
E Buitrago, MFB Badia, YM Georgiev, R Yu, O Lotty, JD Holmes, ...Sensors and Actuators B: Chemical 199, 291-300, 2014201
28
2014
Influence of channel material properties on performance of nanowire transistors
P Razavi, G Fagas, I Ferain, R Yu, S Das, JP ColingeJournal of Applied Physics 111 (12), 2012201
28
2012
Influence of discrete dopant on quantum transport in silicon nanowire transistors
ND Akhavan, I Ferain, R Yu, P Razavi, JP ColingeSolid-State Electronics 70, 92-100, 2012201
24
2012
Junctionless nanowire transistor fabricated with high mobility Ge channel
R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ...physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014201
23
2014
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ...Journal of Materials Chemistry C 2 (43), 9248-9257, 2014201
22
2014

Referred From: https://scholar.google.com/citations?hl=en&user=Gx9sw8YAAAAJ

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Citations 3069
h-index 27
i10-index 44
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