Author

Basu D

Intel Corporation - Cited by 720 - MOSFET - Electronic Band Structure Calculations - Carrier Transport - III-V transistors

Biography

Basu D is affiliated to Department of Psychiatry, Postgraduate Institute of Medical Education & Research, Drug De-addiction and Treatment Centre, Chandigarh 160012, India. He is a recipient of many awards and grants for his valuable contributions and discoveries in major area of subject research. His international experience includes various programs, contributions and participation in different countries for diverse fields of study. His research interests reflect in his wide range of publications in various national and international journals.
Title
Cited by
Year
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …
M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011201
211
2011
Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
D Basu, MJ Gilbert, LF Register, SK Banerjee, AH MacDonaldApplied Physics Letters 92 (4), 2008200
153
2008
Graphene for CMOS and beyond CMOS applications
SK Banerjee, LF Register, E Tutuc, D Basu, S Kim, D Reddy, ...Proceedings of the IEEE 98 (12), 2032-2046, 2010201
112
2010
Non-planar semiconductor device having channel region with low band-gap cladding layer
M Radosavljevic, G Dewey, B Chu-Kung, D Basu, SK Gardner, S Suri, ...US Patent 8,785,909, 2014201
42
2014
Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence
D Basu, LF Register, D Reddy, AH MacDonald, SK BanerjeePhysical Review B 82 (7), 075409, 2010201
31
2010
An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects
D Basu, AK DuttaSolid-state electronics 50 (7-8), 1299-1309, 2006200
22
2006
Compact model for ultrathin low electron effective mass double gate MOSFET
AS Roy, SP Mudanai, D Basu, MA StettlerIEEE Transactions on Electron Devices 61 (2), 308-313, 2013201
21
2013
Surface roughness exacerbated performance degradation in silicon nanowire transistors
D Basu, MJ Gilbert, SK BanerjeeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 060
20
2006
Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers
D Basu, LF Register, AH MacDonald, SK BanerjeePhysical Review B 84 (3), 035449, 2011201
18
2011
Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts
SH Park, N Kharche, D Basu, Z Jiang, SK Nayak, CE Weber, G Hegde, ...71st Device Research Conference, 125-126, 2013201
15
2013
Three discrete areas within the chromosomal 8p21. 3–23 region are associated with the development of breast carcinoma of Indian patients
N Bhattacharya, N Chunder, D Basu, A Roy, S Mandal, J Majumder, ...Experimental and molecular pathology 76 (3), 264-271, 2004200
14
2004
Intel 4 CMOS technology featuring advanced FinFET transistors optimized for high density and high-performance computing
B Sell, S An, J Armstrong, D Bahr, B Bains, R Bambery, K Bang, D Basu, ...2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022202
12
2022
Ballistic band-to-band tunneling in the OFF state in InGaAs MOSFETs
D Basu, R Kotlyar, CE Weber, MA StettlerIEEE Transactions on Electron Devices 61 (), 3417-3422, 2014201
10
2014
National ambient air quality status and trends in India–2010
S Kamyotra, D Basu, S Agrawal, T Darbari, S Roychoudhury, J Hagar, ...Delhi, India: Central Pollution Control Board (CPCB) Ministry of Environment …, 2012201
6
2012
From coherent states in adjacent graphene layers toward low-power logic circuits
LF Register, D Basu, D ReddyAdvances in Condensed Matter Physics 2011, 2011201
4
2011
Source contact and channel interface to reduce body charging from band-to-band tunneling
D Basu, R Mehandru, SH SungUS Patent 11,09,716, 2021202
4
2021
Hyperfunctioning papillary carcinoma of thyroid: a case report and brief literature review
SC Sistla, J John, N Maroju, D BasuInternet J Endocrinol 3 (2), 2007200
4
2007
Using TCAD, response surface model and Monte Carlo methods to model processes and reduce device variation
D Basu, J Guha, P Hatab, P Vaidyanathan, C Mouli, SK Groothuis2009 International Conference on Simulation of Semiconductor Processes and …, 2009200
3
2009
Prediction of retinoblastoma and osteosarcoma: linkage analysis of families by using polymorphic markers around RB1 locus
N Chunder, D Basu, A Roy, S Roychoudhury, CK PandaJOURNAL-BALKAN UNION OF ONCOLOGY 8, 65-70, 20020
3
2003
Source or drain structures for germanium n-channel devices
R Keech, B Chu-Kung, S Rafique, D Merrill, A Agrawal, H Kennel, Y Cao, ...US Patent App. 16/368,088, 000
2
2020

Referred From: https://scholar.google.co.in/citations?user=gwmPOWwAAAAJ&hl=en

Cited by
Citations 720
h-index 12
i10-index 13
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